650V 15A N-CH Power MOSFET TO-247 Product overview: STW18N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW18N65M5 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 15A TO247
N-Channel 650V 15A (Tc) 110W (Tc) Through Hole TO-247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 1262348-STW18N65M5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 110W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 15A
Rds On (Maximum) at Id, Vgs: 220mOhm at 7.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 31nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1240pF at 100V
MOSFET, N-CH, 650V, 15A, 150DEG C, 110W; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.198ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 15A TO247
MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STW18N65M5 | STW18N65M5 | 497-13283-5-ND | 1262348-STW18N65M5 | 26AH0274 | STW18N65M5 | STW18N65M5 |
| Product Name | 650V 15A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - STW18N65M5 | Mosfet, N-Ch, 650V, 15A, 150Deg C, 110W; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 650 volts | 650 volts | 650 volts | ||||
| PD | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel |
