Manufacturer: STMicroelectronics
Win Source Part Number: 037737-STW12NK80Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 10.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 87nC @ 10V
Max Input Capacitance: 2620pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5.25A, 10V
Alternative Parts (Cross-Reference): IXFH13N80Q; STW10NK80Z; STW9N80K5;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
MOSFET N-CH 800V 10.5A TO247-3
N-Channel 800V 10.5A (Tc) 190W (Tc) Through Hole TO-247-3
800V N-Ch MOSFET, 10.5A, 750mR Rds(on), TO-247 Product overview: STW12NK80Z from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 10.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 10.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW12NK80Z can be used for catalog matching and distributor lookup.
MOSFET N-CH 800V 10.5A TO247-3
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N CHANNEL MOSFET, 800V, 10.5A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:10.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 037737-STW12NK80Z | STW12NK80Z | 497-3256-5-ND | 278-STW12NK80Z | STW12NK80Z | STW12NK80Z | 26M3811 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW12NK80Z | Single FETs, MOSFETs | Single FETs, MOSFETs | 800V 10.5A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 800V, 10.5A, To-247; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 800 volts | 800 volts | |||||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |