STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW11NK100Z STW11NK100Z

Description
Manufacturer: STMicroelectronics Win Source Part Number: 088334-STW11NK100Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 8.3A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 162nC @ 10V Max Input Capacitance: 3500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.38 Ohm @ 4.15A, 10V Alternative Parts (Cross-Reference): IXTH6N90A; STW7NK90Z; STW9NK95Z; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 088334-STW11NK100Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 8.3A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 162nC @ 10V Max Input Capacitance: 3500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.38 Ohm @ 4.15A, 10V Alternative Parts (Cross-Reference): IXTH6N90A; STW7NK90Z; STW9NK95Z; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW11NK100Z - 088334-STW11NK100Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW11NK100Z
088334-STW11NK100Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW11NK100Z 088334-STW11NK100Z
Manufacturer: STMicroelectronics Win Source Part Number: 088334-STW11NK100Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 8.3A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 162nC @ 10V Max Input Capacitance: 3500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.38 Ohm @ 4.15A, 10V Alternative Parts (Cross-Reference): IXTH6N90A; STW7NK90Z; STW9NK95Z; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 088334-STW11NK100Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 8.3A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 162nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.38 Ohm @ 4.15A, 10V
Alternative Parts (Cross-Reference): IXTH6N90A; STW7NK90Z; STW9NK95Z;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 497-3255-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-3255-5-ND
Single FETs, MOSFETs 497-3255-5-ND
N-Channel 1000V 8.3A (Tc) 230W (Tc) Through Hole TO-247-3

N-Channel 1000V 8.3A (Tc) 230W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Transistor - 16477985 - Radwell International
Willingboro, NJ, United States
Transistor
16477985
Transistor 16477985
MOSFET, N CHANNEL, 8.3A 1KV, 230W, 1.38 OHM, 10V, 3.75V, TO-247, THROUGH HOLE, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N CHANNEL, 8.3A 1KV, 230W, 1.38 OHM, 10V, 3.75V, TO-247, THROUGH HOLE, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - STW11NK100Z - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW11NK100Z
Single FETs, MOSFETs STW11NK100Z
MOSFET N-CH 1000V 8.3A TO247-3

MOSFET N-CH 1000V 8.3A TO247-3

Supplier's Site Datasheet
MOSFETs - 6875318P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6875318P
MOSFETs 6875318P
MOSFET N-Ch 1KV 8.3A SuperMESH TO247

MOSFET N-Ch 1KV 8.3A SuperMESH TO247

Supplier's Site
MOSFETs - 6875318 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6875318
MOSFETs 6875318
MOSFET N-Ch 1KV 8.3A SuperMESH TO247

MOSFET N-Ch 1KV 8.3A SuperMESH TO247

Supplier's Site
MOSFETs - 9206588 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9206588
MOSFETs 9206588
MOSFET N-Ch 1KV 8.3A SuperMESH TO247

MOSFET N-Ch 1KV 8.3A SuperMESH TO247

Supplier's Site
Power Mosfet, N Channel, 8.3 A, 1 Kv, 1.38 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics - 59M2217 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 8.3 A, 1 Kv, 1.38 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics
59M2217
Power Mosfet, N Channel, 8.3 A, 1 Kv, 1.38 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics 59M2217
Power MOSFET, N Channel, 8.3 A, 1 kV, 1.38 ohm, 10 V, 3.75 V RoHS Compliant: No

Power MOSFET, N Channel, 8.3 A, 1 kV, 1.38 ohm, 10 V, 3.75 V RoHS Compliant: No

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW11NK100Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW11NK100Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW11NK100Z
MOSFET N-CH 1000V 8.3A TO247-3

MOSFET N-CH 1000V 8.3A TO247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 1000 Volt 8.3 A Zener SuperMESH

MOSFET N-Ch 1000 Volt 8.3 A Zener SuperMESH

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Radwell International ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 088334-STW11NK100Z 497-3255-5-ND 16477985 STW11NK100Z 6875318P 6875318 59M2217 STW11NK100Z STW11NK100Z
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW11NK100Z Single FETs, MOSFETs Transistor Single FETs, MOSFETs MOSFETs MOSFETs Power Mosfet, N Channel, 8.3 A, 1 Kv, 1.38 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 1000 volts 1000 volts
PD 230000 milliwatts 230000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247 TO-247; To-247 TO-3 162 nC @ 10 V
Unlock Full Specs
to access all available technical data