N-Channel 650V 5.4A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
Manufacturer: STMicroelectronics
Win Source Part Number: 1006855-STU6N65K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 5.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 880pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
MOSFET N-CH 650V 5.4A IPAK
MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-13593-5-ND | 1006855-STU6N65K3 | STU6N65K3 | STU6N65K3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU6N65K3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; I-Pak | 880 pF @ 50 V | |
| V(BR)DSS | 650 volts |
