N-Channel 620V 5.5A (Tc) 90W (Tc) Through Hole TO-251 (IPAK)
620V 5.5A N-CH MOSFET, 1.28 Ohm, IPAK, Through Hole Product overview: STU6N62K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 620V, 5.5A, 1.28 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 620V, 5.5A, 1.28 Ohm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU6N62K3 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1262272-STU6N62K3
Series: SuperMESH3
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Family Name: STU6N62K3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: I-Pak
Channel Type Type: N
Drain Source Voltage: 620V
Vgs(th) (Maximum) @ Id: 4.5V @ 50μA
Gate Charge (Qg) (Maximum) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 875pF @ 50V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 90W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
Alternative Parts (Cross-Reference): TSM6N60CH C5G; SPS03N60C3; SPS03N60C3XK;
Introduction Date: May 19, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
MOSFET N-CH 620V 5.5A IPAK
MOSFET, N CH, 620V, 5.5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:5.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 620V 5.5A IPAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-12699-5-ND | 278-STU6N62K3 | 1262272-STU6N62K3 | STU6N62K3 | STU6N62K3 | 57P2564 | STU6N62K3 |
| Product Name | Single FETs, MOSFETs | Through-Hole 620V 5.5A 1.28 Ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU6N62K3 | Single FETs, MOSFETs | MOSFET | Mosfet, N Ch, 620V, 5.5A, To-251; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | TO-220; SOT3 | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | TO-251 (IPAK) | ||
| PD | 90000 milliwatts | 90000 milliwatts | 90000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||
| QG | 30 nC |
