STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N60M2 STU5N60M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 795827-STU5N60M2 Series: MDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Family Name: STU5N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 165pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 45W (Tc) Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V Alternative Parts (Cross-Reference): FDU7N60NZ; IPU60R950C6; IPS65R1K5CEAKMA1; TK6Q60W; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 795827-STU5N60M2 Series: MDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Family Name: STU5N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 165pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 45W (Tc) Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V Alternative Parts (Cross-Reference): FDU7N60NZ; IPU60R950C6; IPS65R1K5CEAKMA1; TK6Q60W; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N60M2 - 795827-STU5N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N60M2
795827-STU5N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N60M2 795827-STU5N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 795827-STU5N60M2 Series: MDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Family Name: STU5N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 165pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 45W (Tc) Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V Alternative Parts (Cross-Reference): FDU7N60NZ; IPU60R950C6; IPS65R1K5CEAKMA1; TK6Q60W; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 795827-STU5N60M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Family Name: STU5N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 4.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 165pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 45W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V
Alternative Parts (Cross-Reference): FDU7N60NZ; IPU60R950C6; IPS65R1K5CEAKMA1; TK6Q60W;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
N-Channel 600V 3.7A MOSFET Transistor
278-STU5N60M2
N-Channel 600V 3.7A MOSFET Transistor 278-STU5N60M2
600V N-Channel MOSFET, 1.4R Rds(on), 3.7A ID, IPAK Product overview: STU5N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU5N60M2 can be used for catalog matching and distributor lookup.

600V N-Channel MOSFET, 1.4R Rds(on), 3.7A ID, IPAK Product overview: STU5N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU5N60M2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - STU5N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STU5N60M2
Single FETs, MOSFETs STU5N60M2
MOSFET N-CH 600V 3.7A IPAK

MOSFET N-CH 600V 3.7A IPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-14224-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14224-5-ND
Single FETs, MOSFETs 497-14224-5-ND
N-Channel 600V 3.7A (Tc) 45W (Tc) Through Hole I-PAK

N-Channel 600V 3.7A (Tc) 45W (Tc) Through Hole I-PAK

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 1.26Ohm typ. 3.7A MDmesh M2

MOSFET N-Ch 600V 1.26Ohm typ. 3.7A MDmesh M2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU5N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU5N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU5N60M2
MOSFET N-CH 600V 3.7A IPAK

MOSFET N-CH 600V 3.7A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 795827-STU5N60M2 278-STU5N60M2 STU5N60M2 497-14224-5-ND STU5N60M2 STU5N60M2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N60M2 N-Channel 600V 3.7A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 45000 milliwatts 45000 milliwatts 45000 milliwatts
TJ 150 C (302 F) -55 C (-67 F) 150 C (302 F)
Package Type TO-220; SOT3 TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Packing Method Tube; Tube Tube; Tube
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