STMicroelectronics, Inc. Single FETs, MOSFETs STU4N62K3

Description
N-Channel 620V 3.8A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
  • Single FETs, MOSFETs - 497-12364-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STU4N62K3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU4N62K3 - 093309-STU4N62K3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU4N62K3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics - 94T3514 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 620V 3.8A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12364-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12364-ND
Single FETs, MOSFETs 497-12364-ND
N-Channel 620V 3.8A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

N-Channel 620V 3.8A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
Single FETs, MOSFETs - STU4N62K3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STU4N62K3
Single FETs, MOSFETs STU4N62K3
MOSFET N-CH 620V 3.8A IPAK

MOSFET N-CH 620V 3.8A IPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU4N62K3 - 093309-STU4N62K3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU4N62K3
093309-STU4N62K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU4N62K3 093309-STU4N62K3
Manufacturer: STMicroelectronics Win Source Part Number: 093309-STU4N62K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 093309-STU4N62K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 620V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 550pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 1.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STU4N62K3
MOSFET STU4N62K3
MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3

MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU4N62K3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU4N62K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU4N62K3
MOSFET N-CH 620V 3.8A IPAK

MOSFET N-CH 620V 3.8A IPAK

Supplier's Site
Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics - 94T3514 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics
94T3514
Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics 94T3514
Power MOSFET, N Channel, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V RoHS Compliant: Yes

Power MOSFET, N Channel, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET
Product Number 497-12364-ND STU4N62K3 093309-STU4N62K3 STU4N62K3 STU4N62K3 94T3514
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU4N62K3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 620 volts 620 volts
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