STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU3N62K3 STU3N62K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 054395-STU3N62K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: STU3N62K3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 385pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.4A, 10V Alternative Parts (Cross-Reference): AOI4T60; MDI4N60BTH; MDI4N60TH; MDIS4N60BTH; Introduction Date: July 10, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU3N62K3 - 054395-STU3N62K3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-12695-5-ND - DigiKey
    DigiKey
  • Mosfet, N Ch, 620V, 2.7A, To-251; Channel Type Stmicroelectronics - 57P2562 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU3N62K3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 054395-STU3N62K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: STU3N62K3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 385pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.4A, 10V Alternative Parts (Cross-Reference): AOI4T60; MDI4N60BTH; MDI4N60TH; MDIS4N60BTH; Introduction Date: July 10, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU3N62K3 - 054395-STU3N62K3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU3N62K3
054395-STU3N62K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU3N62K3 054395-STU3N62K3
Manufacturer: STMicroelectronics Win Source Part Number: 054395-STU3N62K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: STU3N62K3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 385pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.4A, 10V Alternative Parts (Cross-Reference): AOI4T60; MDI4N60BTH; MDI4N60TH; MDIS4N60BTH; Introduction Date: July 10, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 054395-STU3N62K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STU3N62K3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 620V
Continuous Drain Current at 25°C: 2.7A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 385pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.4A, 10V
Alternative Parts (Cross-Reference): AOI4T60; MDI4N60BTH; MDI4N60TH; MDIS4N60BTH;
Introduction Date: July 10, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-12695-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12695-5-ND
Single FETs, MOSFETs 497-12695-5-ND
N-Channel 620V 2.7A (Tc) 45W (Tc) Through Hole I-PAK

N-Channel 620V 2.7A (Tc) 45W (Tc) Through Hole I-PAK

Buy Now Datasheet
Mosfet, N Ch, 620V, 2.7A, To-251; Channel Type Stmicroelectronics - 57P2562 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 620V, 2.7A, To-251; Channel Type Stmicroelectronics
57P2562
Mosfet, N Ch, 620V, 2.7A, To-251; Channel Type Stmicroelectronics 57P2562
MOSFET, N CH, 620V, 2.7A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 620V, 2.7A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STU3N62K3
MOSFET STU3N62K3
MOSFET N-Ch, 620V-2.2ohms 2.7A

MOSFET N-Ch, 620V-2.2ohms 2.7A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU3N62K3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU3N62K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU3N62K3
MOSFET N-CH 620V 2.7A IPAK

MOSFET N-CH 620V 2.7A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 054395-STU3N62K3 497-12695-5-ND 57P2562 STU3N62K3 STU3N62K3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU3N62K3 Single FETs, MOSFETs Mosfet, N Ch, 620V, 2.7A, To-251; Channel Type Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 620 volts
PD 45000 milliwatts
TJ 150 C (302 F)
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