STMicroelectronics, Inc. Single FETs, MOSFETs STU3N62K3

N-Channel 620V 2.7A (Tc) 45W (Tc) Through Hole I-PAK

620V N-Channel Power MOSFET, 2.7A, 2.5 Ohm, IPAK Product overview: STU3N62K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 620V, 2.7A, 2.5 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 620V, 2.7A, 2.5 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU3N62K3 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 054395-STU3N62K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STU3N62K3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 620V
Continuous Drain Current at 25°C: 2.7A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 385pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.4A, 10V
Alternative Parts (Cross-Reference): AOI4T60; MDI4N60BTH; MDI4N60TH; MDIS4N60BTH;
Introduction Date: July 10, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance