STMicroelectronics, Inc. FETs - Single - STU2N62K3 STU2N62K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 808540-STU2N62K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 620V Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 45W (Tc) Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 3.6Ohm at 1.1A, 10V Gate Charge (Qg) (Maximum) at Vgs: 15nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 340pF at 50V Current - Continuous Drain (Id) at 25°C: 2.2A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 50μA Part Number Series: STU2N Maximum Vgs: ±30V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 808540-STU2N62K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 620V Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 45W (Tc) Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 3.6Ohm at 1.1A, 10V Gate Charge (Qg) (Maximum) at Vgs: 15nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 340pF at 50V Current - Continuous Drain (Id) at 25°C: 2.2A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 50μA Part Number Series: STU2N Maximum Vgs: ±30V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STU2N62K3 - 808540-STU2N62K3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STU2N62K3
808540-STU2N62K3
FETs - Single - STU2N62K3 808540-STU2N62K3
Manufacturer: STMicroelectronics Win Source Part Number: 808540-STU2N62K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 620V Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 45W (Tc) Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 3.6Ohm at 1.1A, 10V Gate Charge (Qg) (Maximum) at Vgs: 15nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 340pF at 50V Current - Continuous Drain (Id) at 25°C: 2.2A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 50μA Part Number Series: STU2N Maximum Vgs: ±30V

Manufacturer: STMicroelectronics
Win Source Part Number: 808540-STU2N62K3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 620V
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 45W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 3.6Ohm at 1.1A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 15nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 340pF at 50V
Current - Continuous Drain (Id) at 25°C: 2.2A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 50μA
Part Number Series: STU2N
Maximum Vgs: ±30V

Buy Now
Single FETs, MOSFETs - 497-12360-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12360-ND
Single FETs, MOSFETs 497-12360-ND
N-Channel 620V 2.2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

N-Channel 620V 2.2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
Singapore
Through-Hole 620V 2.2A MOSFET Transistor
278-STU2N62K3
Through-Hole 620V 2.2A MOSFET Transistor 278-STU2N62K3
N-Ch MOSFET, 620V, 3.6R, 2.2A, IPAK, Through Hole Product overview: STU2N62K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 620V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 620V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU2N62K3 can be used for catalog matching and distributor lookup.

N-Ch MOSFET, 620V, 3.6R, 2.2A, IPAK, Through Hole Product overview: STU2N62K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 620V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 620V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU2N62K3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH

MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH

Buy Now Datasheet
Mosfet, N Ch, 620V, 2.2A, To-251; Channel Type Stmicroelectronics - 87T3908 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 620V, 2.2A, To-251; Channel Type Stmicroelectronics
87T3908
Mosfet, N Ch, 620V, 2.2A, To-251; Channel Type Stmicroelectronics 87T3908
MOSFET, N CH, 620V, 2.2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 620V, 2.2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU2N62K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU2N62K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU2N62K3
MOSFET N-CH 620V 2.2A IPAK

MOSFET N-CH 620V 2.2A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 808540-STU2N62K3 497-12360-ND 278-STU2N62K3 STU2N62K3 87T3908 STU2N62K3
Product Name FETs - Single - STU2N62K3 Single FETs, MOSFETs Through-Hole 620V 2.2A MOSFET Transistor MOSFET Mosfet, N Ch, 620V, 2.2A, To-251; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
QG 15 nC
PD 45000 milliwatts 45000 milliwatts
TJ 150 C (302 F) -55 C (-67 F)
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