N-Channel 620V 2.2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
Manufacturer: STMicroelectronics
Win Source Part Number: 808540-STU2N62K3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 620V
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 45W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 3.6Ohm at 1.1A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 15nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 340pF at 50V
Current - Continuous Drain (Id) at 25°C: 2.2A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 50μA
Part Number Series: STU2N
Maximum Vgs: ±30V
MOSFET, N CH, 620V, 2.2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 620V 2.2A IPAK
MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH
| DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-12360-ND | 808540-STU2N62K3 | 87T3908 | STU2N62K3 | STU2N62K3 |
| Product Name | Single FETs, MOSFETs | FETs - Single - STU2N62K3 | Mosfet, N Ch, 620V, 2.2A, To-251; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3 | TO-3 | TO-251 (IPAK) | |
| QG | 15 nC | ||||
| PD | 45000 milliwatts |
