STMicroelectronics, Inc. Transistor STS7C4F30L

Description
DUAL POWER MOSFET, 1 N-CHANNEL, 1 P-CHANNEL, 30V,7A, 30V 4A, 8 PIN SOIC. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet
Description
DUAL POWER MOSFET, 1 N-CHANNEL, 1 P-CHANNEL, 30V,7A, 30V 4A, 8 PIN SOIC. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 123820776 - Radwell International
Willingboro, NJ, United States
Transistor
123820776
Transistor 123820776
DUAL POWER MOSFET, 1 N-CHANNEL, 1 P-CHANNEL, 30V,7A, 30V 4A, 8 PIN SOIC. FREE 2 YEAR RADWELL WARRANTY

DUAL POWER MOSFET, 1 N-CHANNEL, 1 P-CHANNEL, 30V,7A, 30V 4A, 8 PIN SOIC. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS7C4F30L - 098286-STS7C4F30L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS7C4F30L
098286-STS7C4F30L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS7C4F30L 098286-STS7C4F30L
Manufacturer: STMicroelectronics Win Source Part Number: 098286-STS7C4F30L Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7A, 4A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 5V Max Input Capacitance: 1050pF @ 25V Maximum Rds On at Id,Vgs: 22 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 098286-STS7C4F30L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7A, 4A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 23nC @ 5V
Max Input Capacitance: 1050pF @ 25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - 497-3232-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
497-3232-2-ND
FET, MOSFET Arrays 497-3232-2-ND
Mosfet Array N and P-Channel 30V 7A, 4A 2W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V 7A, 4A 2W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - STS7C4F30L - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
STS7C4F30L
FET, MOSFET Arrays STS7C4F30L
MOSFET N/P-CH 30V 7A/4A 8SOIC

MOSFET N/P-CH 30V 7A/4A 8SOIC

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS7C4F30L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS7C4F30L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS7C4F30L
MOSFET N/P-CH 30V 7A/4A 8SOIC

MOSFET N/P-CH 30V 7A/4A 8SOIC

Supplier's Site

Technical Specifications

  Radwell International Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 123820776 098286-STS7C4F30L 497-3232-2-ND STS7C4F30L STS7C4F30L
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS7C4F30L FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; N and P-Channel
V(BR)DSS 30 volts 30 volts
PD 2000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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