STMicroelectronics, Inc. Single FETs, MOSFETs STS5NF60L

Power Field-Effect Transistor, 5A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET N-CH 60V 5A 8SO

60V 5A N-CH MOSFET, 45mR RdsOn, SOIC Product overview: STS5NF60L from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STS5NF60L can be used for catalog matching and distributor lookup.

N-Channel 60V 5A (Tc) 2.5W (Tc) Surface Mount 8-SOIC

N-Channel 60V 5A (Tc) 2.5W (Tc) Surface Mount 8-SOIC

N-Channel 60V 5A (Tc) 2.5W (Tc) Surface Mount 8-SOIC

Manufacturer: STMicroelectronics
Win Source Part Number: 031542-STS5NF60L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 17nC @ 5V
Max Input Capacitance: 1250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 2.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance