30V 4A 50mR N-CH MOSFET SOP-8 Product overview: STS4DNF30L from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-STS4DNF30L can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 125291-STS4DNF30L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 330pF @ 25V
Maximum Rds On at Id,Vgs: 50 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N-Channel (Dual) 30V 4A 2W Surface Mount 8-SOIC
MOSFET 2N-CH 30V 4A 8SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 289-STS4DNF30L | 125291-STS4DNF30L | 497-5251-2-ND | STS4DNF30L |
| Product Name | 30V 4A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4DNF30L | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| PD | 2000 milliwatts | 2000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |