N-Channel 800V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
N-Channel 800V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
Manufacturer: STMicroelectronics
Win Source Part Number: 054006-STQ1NK80ZR-AP
Packaging: AMMO PACKAGE
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 300mA (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 7.7nC @ 10V
Max Input Capacitance: 160pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 16 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
N-Ch 800V 0.3A MOSFET TO-92 16R Rds(on) Product overview: STQ1NK80ZR-AP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 0.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 0.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STQ1NK80ZR-AP can be used for catalog matching and distributor lookup.
MOSFET N-CH 800V 300MA TO92-3
MOSFET N-CH 800V 300MA TO92-3
N CH MOSFET, SuperMESH, 800V, 1A, TO-92, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:300mA; On Resistance Rds(on):13ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes
Power MOSFET, N Channel, 300 mA, 800 V, 13 ohm, 10 V, 3.75 V RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | 497-6197-3-ND | 054006-STQ1NK80ZR-AP | 278-STQ1NK80ZR-AP | STQ1NK80ZR-AP | STQ1NK80ZR-AP | 57P2074 | 01X0057 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STQ1NK80ZR-AP | 800V 0.3A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Ch Mosfet, Supermesh, 800V, 1A, To-92, Full Reel; Transistor Polarity Stmicroelectronics | Power Mosfet, N Channel, 300 Ma, 800 V, 13 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92; SOT3; TO-92-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Through Hole | TO-3; TO-92 | TO-3 | |
| V(BR)DSS | 800 volts | 800 volts | |||||
| PD | 3000 milliwatts | 3000 milliwatts | 3000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
