STQ1NK60ZR-AP is an N-channel 600 V, 0.3 A Zener-protected SuperMESH™ Power MOSFET in a TO-92 ammopack package. It has a maximum drain-source on-resistance of 15 Ω at VGS = 10 V and ID = 0.4 A, and a total power dissipation of 3 W at TC = 25 °C. The device includes built-in back-to-back Zener diodes for enhanced ESD protection and is 100% avalanche tested with a single pulse avalanche energy rating of 60 mJ at TJ = 25 °C. Thermal resistance from junction to ambient is 120 °C/W. It meets RoHS standards and is designed for switching applications with high dv/dt capability. The operating junction temperature range is -55 °C to 150 °C.
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:300mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:3W; No. of Pins:3Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 15AC0616 |
| Product Name | Channel Type Stmicroelectronics |
| Package Type | TO-3 |
