STMicroelectronics, Inc. Single FETs, MOSFETs STP9NK65Z

Description
N-Channel 650V 6.4A (Tc) 125W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 650V 6.4A (Tc) 125W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP9NK65Z-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STP9NK65Z-ND
Single FETs, MOSFETs STP9NK65Z-ND
N-Channel 650V 6.4A (Tc) 125W (Tc) Through Hole TO-220

N-Channel 650V 6.4A (Tc) 125W (Tc) Through Hole TO-220

Buy Now Datasheet
FETs - Single - STP9NK65Z - 1261811-STP9NK65Z - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STP9NK65Z
1261811-STP9NK65Z
FETs - Single - STP9NK65Z 1261811-STP9NK65Z
Manufacturer: STMicroelectronics Win Source Part Number: 1261811-STP9NK65Z Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 125W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 6.4A Rds On (Maximum) at Id, Vgs: 1.2Ohm at 3.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 41nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1145pF at 25V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261811-STP9NK65Z
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 125W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 6.4A
Rds On (Maximum) at Id, Vgs: 1.2Ohm at 3.2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 41nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1145pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP9NK65Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP9NK65Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP9NK65Z
MOSFET N-CH 650V 6.4A TO220AB

MOSFET N-CH 650V 6.4A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH

MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STP9NK65Z-ND 1261811-STP9NK65Z STP9NK65Z STP9NK65Z
Product Name Single FETs, MOSFETs FETs - Single - STP9NK65Z Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
V(BR)DSS 650 volts
QG 41 nC
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