STMicroelectronics, Inc. Single FETs, MOSFETs STP90N55F4

Description
N-Channel 55V 90A (Tc) 150W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 55V 90A (Tc) 150W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10399-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10399-5-ND
Single FETs, MOSFETs 497-10399-5-ND
N-Channel 55V 90A (Tc) 150W (Tc) Through Hole TO-220

N-Channel 55V 90A (Tc) 150W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP90N55F4 - 038603-STP90N55F4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP90N55F4
038603-STP90N55F4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP90N55F4 038603-STP90N55F4
Manufacturer: STMicroelectronics Win Source Part Number: 038603-STP90N55F4 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 90nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 45A, 10V Alternative Parts (Cross-Reference): IRL3705ZPBF; BUK9510-55A; STP80NF55L-08; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 038603-STP90N55F4
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 4800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 45A, 10V
Alternative Parts (Cross-Reference): IRL3705ZPBF; BUK9510-55A; STP80NF55L-08;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP90N55F4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP90N55F4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP90N55F4
MOSFET N-CH 55V 90A TO220AB

MOSFET N-CH 55V 90A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-10399-5-ND 038603-STP90N55F4 STP90N55F4
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP90N55F4 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB +/- 20V
V(BR)DSS 55 volts
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