STMicroelectronics, Inc. Single FETs, MOSFETs STP8N80K5

Description
N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13655-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13655-5-ND
Single FETs, MOSFETs 497-13655-5-ND
N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220

N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8N80K5 - 1261798-STP8N80K5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8N80K5
1261798-STP8N80K5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8N80K5 1261798-STP8N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 1261798-STP8N80K5 Series: SuperMESH5 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Family Name: STP8N80K5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 450pF @ 100V Vgs (Maximum): ±30V Power Dissipation (Maximum): 110W (Tc) Rds On (Maximum) @ Id, Vgs: 950 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): SPP08N80C3XK; TSM10N80CZ C0; SPP08N80C3XKSA1; ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1261798-STP8N80K5
Series: SuperMESH5
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Family Name: STP8N80K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 450pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 110W (Tc)
Rds On (Maximum) @ Id, Vgs: 950 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): SPP08N80C3XK; TSM10N80CZ C0; SPP08N80C3XKSA1;
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STP8N80K5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP8N80K5
Single FETs, MOSFETs STP8N80K5
MOSFET N CH 800V 6A TO220

MOSFET N CH 800V 6A TO220

Supplier's Site Datasheet
MOSFET N CH 800V 6A TO220 - 761-STP8N80K5 - Utmel Electronic Limited
Hong Kong, China
MOSFET N CH 800V 6A TO220
761-STP8N80K5
MOSFET N CH 800V 6A TO220 761-STP8N80K5
MOSFET N CH 800V 6A TO220

MOSFET N CH 800V 6A TO220

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP8N80K5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP8N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP8N80K5
MOSFET N CH 800V 6A TO220

MOSFET N CH 800V 6A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 800V 0.76 Ohm 6 A MDmesh K5

MOSFET N-Ch 800V 0.76 Ohm 6 A MDmesh K5

Buy Now Datasheet
Mosfet, N-Ch, 800V, 6A, To-220Ab; Channel Type Stmicroelectronics - 45AC7733 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 6A, To-220Ab; Channel Type Stmicroelectronics
45AC7733
Mosfet, N-Ch, 800V, 6A, To-220Ab; Channel Type Stmicroelectronics 45AC7733
MOSFET, N-CH, 800V, 6A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 800V, 6A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-13655-5-ND 1261798-STP8N80K5 STP8N80K5 761-STP8N80K5 STP8N80K5 STP8N80K5 45AC7733
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8N80K5 Single FETs, MOSFETs MOSFET N CH 800V 6A TO220 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 800V, 6A, To-220Ab; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
QG 16.5 nC
PD 110000 milliwatts 110000 milliwatts 110000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data