800V 6A N-CH MOSFET TO-220 0.95 Ohm Product overview: STP8N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6A, 0.95 Ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6A, 0.95 Ohm, TO-220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP8N80K5 can be used for catalog matching and distributor lookup.
N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220
MOSFET N CH 800V 6A TO220
Manufacturer: STMicroelectronics
Win Source Part Number: 1261798-STP8N80K5
Series: SuperMESH5
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Family Name: STP8N80K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 450pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 110W (Tc)
Rds On (Maximum) @ Id, Vgs: 950 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): SPP08N80C3XK; TSM10N80CZ C0; SPP08N80C3XKSA1;
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 800V, 6A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N CH 800V 6A TO220
MOSFET N CH 800V 6A TO220
MOSFET N-Ch 800V 0.76 Ohm 6 A MDmesh K5
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STP8N80K5 | 497-13655-5-ND | STP8N80K5 | 1261798-STP8N80K5 | 45AC7733 | STP8N80K5 | 761-STP8N80K5 | STP8N80K5 |
| Product Name | 800V 6A 0.95 Ohm TO-220 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8N80K5 | Mosfet, N-Ch, 800V, 6A, To-220Ab; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N CH 800V 6A TO220 | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| PD | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3 | TO-3; TO-220 | TO-220; TO-220-3 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
