STMicroelectronics, Inc. Single FETs, MOSFETs STP8N65M5

Description
MOSFET N-CH 650V 7A TO220-3
Request a Quote Datasheet
Description
MOSFET N-CH 650V 7A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP8N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP8N65M5
Single FETs, MOSFETs STP8N65M5
MOSFET N-CH 650V 7A TO220-3

MOSFET N-CH 650V 7A TO220-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8N65M5 - 212368-STP8N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8N65M5
212368-STP8N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8N65M5 212368-STP8N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 212368-STP8N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Family Name: STP8N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 690pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V Alternative Parts (Cross-Reference): IPP60R600E6XKSA1; IPP60R600P6XKSA1; IPP65R600E6XKSA1; IPP60R600E6XK; Introduction Date: October 23, 2009 ECCN: EAR99 Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212368-STP8N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STP8N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 690pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): IPP60R600E6XKSA1; IPP60R600P6XKSA1; IPP65R600E6XKSA1; IPP60R600E6XK;
Introduction Date: October 23, 2009
ECCN: EAR99
Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-10885-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10885-5-ND
Single FETs, MOSFETs 497-10885-5-ND
N-Channel 650V 7A (Tc) 70W (Tc) Through Hole TO-220

N-Channel 650V 7A (Tc) 70W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP8N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP8N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP8N65M5
MOSFET N-CH 650V 7A TO220-3

MOSFET N-CH 650V 7A TO220-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number STP8N65M5 212368-STP8N65M5 497-10885-5-ND STP8N65M5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8N65M5 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts 650 volts
IDSS 7000 milliamps
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