MOSFET N-CH 650V 7A TO220-3
Manufacturer: STMicroelectronics
Win Source Part Number: 212368-STP8N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STP8N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 690pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): IPP60R600E6XKSA1; IPP60R600P6XKSA1; IPP65R600E6XKSA1; IPP60R600E6XK;
Introduction Date: October 23, 2009
ECCN: EAR99
Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
N-Channel 650V 7A (Tc) 70W (Tc) Through Hole TO-220
MOSFET N-CH 650V 7A TO220-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | STP8N65M5 | 212368-STP8N65M5 | 497-10885-5-ND | STP8N65M5 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8N65M5 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 650 volts | 650 volts | ||
| IDSS | 7000 milliamps |