Manufacturer: STMicroelectronics
Win Source Part Number: 1261797-STP85NF55
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 300W
Alternative Parts (Cross-Reference): SPP100N06S2L-05; STP141NF55; STP150NF55; STP85NF55;
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 8mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3700pF at 25V
N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220
MOSFET N-CH 55V 80A TO220AB
N CHANNEL MOSFET, 55V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1261797-STP85NF55 | 497-STP85NF55-ND | STP85NF55 | 89K1637 | STP85NF55 |
| Product Name | FETs - Single - STP85NF55 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 55V, 80A, To-220; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 55 volts | ||||
| QG | 150 nC | ||||
| PD | 300000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) |