STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP75NF20 STP75NF20

Description
Manufacturer: STMicroelectronics Win Source Part Number: 089310-STP75NF20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3260pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 37A, 10V Alternative Parts (Cross-Reference): FDP52N20; PSMN057-200P; STP75NF20; PSMN057-200P,127; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 089310-STP75NF20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3260pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 37A, 10V Alternative Parts (Cross-Reference): FDP52N20; PSMN057-200P; STP75NF20; PSMN057-200P,127; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP75NF20 - 089310-STP75NF20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP75NF20
089310-STP75NF20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP75NF20 089310-STP75NF20
Manufacturer: STMicroelectronics Win Source Part Number: 089310-STP75NF20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3260pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 34 mOhm @ 37A, 10V Alternative Parts (Cross-Reference): FDP52N20; PSMN057-200P; STP75NF20; PSMN057-200P,127; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 089310-STP75NF20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 3260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 37A, 10V
Alternative Parts (Cross-Reference): FDP52N20; PSMN057-200P; STP75NF20; PSMN057-200P,127;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STP75NF20 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP75NF20
Single FETs, MOSFETs STP75NF20
MOSFET N-CH 200V 75A TO220AB

MOSFET N-CH 200V 75A TO220AB

Supplier's Site Datasheet
Transistor - 38985349 - Radwell International
Willingboro, NJ, United States
Transistor
38985349
Transistor 38985349
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 200V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 200V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - 497-5958-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-5958-5-ND
Single FETs, MOSFETs 497-5958-5-ND
N-Channel 200V 75A (Tc) 190W (Tc) Through Hole TO-220

N-Channel 200V 75A (Tc) 190W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP75NF20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP75NF20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP75NF20
MOSFET N-CH 200V 75A TO220AB

MOSFET N-CH 200V 75A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Low charge STripFET

MOSFET Low charge STripFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Radwell International DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 089310-STP75NF20 STP75NF20 38985349 497-5958-5-ND STP75NF20 STP75NF20
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP75NF20 Single FETs, MOSFETs Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
PD 190000 milliwatts 190000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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