The STMicroelectronics N-channel MOSFET, part number 45AC7728, features a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) rating of 42A. It has a low on-resistance (RDS(on)) of 0.056 Oc, which contributes to its efficiency in power applications. The device is designed for high-performance switching applications and is avalanche rated, ensuring reliability under transient conditions. It is available in a TO-220 package, suitable for through-hole mounting. The MOSFET operates effectively at a maximum junction temperature of 150¬8C and has a total power dissipation capability of 250W at 25¬8C. This product is RoHS compliant, making it suitable for environmentally conscious designs.
MOSFET N-CH 650V 42A TO220
650V 42A N-CH MOSFET TO-220 63mR Rds(on) Product overview: STP57N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 42A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 42A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP57N65M5 can be used for catalog matching and distributor lookup.
N-Channel 650V 42A (Tc) 250W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1261758-STP57N65M5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 250W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 42A
Rds On (Maximum) at Id, Vgs: 63mOhm at 21A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 98nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 4200pF at 100V
MOSFET, N-CH, 650V, 42A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
MOSFET N-CH 650V 42A TO220
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP57N65M5 | 278-STP57N65M5 | 497-STP57N65M5-ND | 1261758-STP57N65M5 | 45AC7728 | STP57N65M5 | STP57N65M5 |
| Product Name | Single FETs, MOSFETs | 650V 42A TO-220 MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - STP57N65M5 | Mosfet, N-Ch, 650V, 42A, To-220Ab; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 650 volts | 650 volts | |||||
| IDSS | 42000 milliamps | 42000 milliamps | |||||
| PD | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts |
