MOSFET N-CH 600V 34A TO220
Manufacturer: STMicroelectronics
Win Source Part Number: 1261733-STP40N60M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Family Name: STP40N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2500pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 250W (Tc)
Rds On (Maximum) @ Id, Vgs: 88 mOhm @ 17A, 10V
Alternative Parts (Cross-Reference): TK31E60W; IPP60R165CPAKSA1; IPP65R110CFDAXK;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
600V 34A N-CH MOSFET TO-220 88mR Product overview: STP40N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 34A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 34A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP40N60M2 can be used for catalog matching and distributor lookup.
N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-220
MOSFET, N-CH, 600V, 34A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 600V 34A TO220
MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP40N60M2 | 1261733-STP40N60M2 | 278-STP40N60M2 | 497-14222-5-ND | 45AC7723 | STP40N60M2 | STP40N60M2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP40N60M2 | 600V 34A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 34A, To-220Ab; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | ||||||
| IDSS | 34000 milliamps | 34000 milliamps | |||||
| PD | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts |
