Manufacturer: STMicroelectronics
Win Source Part Number: 053930-STP34NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 29A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 80.4nC @ 10V
Max Input Capacitance: 2785pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 110 mOhm @ 14.5A, 10V
Alternative Parts (Cross-Reference): IPP60R165CP; STP28NM60ND; STP20NM60FD;
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 50
N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-220
MOSFET N-Ch 600V 0.097 Ohm 29A Fdmesh II FD
MOSFET, N CH, 600V, 29A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 600V 29A TO220
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 053930-STP34NM60ND | 497-11335-5-ND | STP34NM60ND | 47T9438 | STP34NM60ND |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP34NM60ND | Single FETs, MOSFETs | MOSFET | Mosfet, N Ch, 600V, 29A, To-220; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | ||||
| PD | 190000 milliwatts | ||||
| TJ | 150 C (302 F) |
