STMicroelectronics, Inc. Single FETs, MOSFETs STP34N65M5

Description
N-Channel 650V 28A (Tc) 190W (Tc) Through Hole TO-220
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Description
N-Channel 650V 28A (Tc) 190W (Tc) Through Hole TO-220
Request a Quote Datasheet

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Single FETs, MOSFETs - 497-13111-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13111-5-ND
Single FETs, MOSFETs 497-13111-5-ND
N-Channel 650V 28A (Tc) 190W (Tc) Through Hole TO-220

N-Channel 650V 28A (Tc) 190W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP34N65M5 - 1261726-STP34N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP34N65M5
1261726-STP34N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP34N65M5 1261726-STP34N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1261726-STP34N65M5 Series: MDmesh V Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Family Name: STP34N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IPP60R099CPAXK; IPP60R099CPA; IPP65R110CFDAXK; Introduction Date: February 23, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1261726-STP34N65M5
Series: MDmesh V
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Family Name: STP34N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 62.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): IPP60R099CPAXK; IPP60R099CPA; IPP65R110CFDAXK;
Introduction Date: February 23, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP34N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP34N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP34N65M5
MOSFET N-CH 650V 28A TO220

MOSFET N-CH 650V 28A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5

MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-13111-5-ND 1261726-STP34N65M5 STP34N65M5 STP34N65M5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP34N65M5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-247; SOT3 10V
QG 62.5 nC
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