Manufacturer: STMicroelectronics
Win Source Part Number: 712359-STP33N60M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 45.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1781pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 125 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): FCP104N60F; STP30N65M5; STP31N65M5; STP33N60M2;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 26A TO220
N-Channel 600V 26A (Tc) 190W (Tc) Through Hole TO-220
MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2
MOSFET N-CH 600V 26A TO220
MOSFET, N-CH, 600V, 26A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 712359-STP33N60M2 | STP33N60M2 | 497-14221-5-ND | STP33N60M2 | STP33N60M2 | 45AC7718 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP33N60M2 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 26A, To-220Ab; Channel Type Stmicroelectronics |
| QG | 45.5 nC | |||||
| PD | 190000 milliwatts | 190000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-220; TO-247; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | |
| Packing Method | Tube; Tube | Tube; Tube |
