STMicroelectronics, Inc. Single FETs, MOSFETs STP30NM30N

Description
N-Channel 300V 30A (Tc) 160W (Tc) Through Hole TO-220
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Description
N-Channel 300V 30A (Tc) 160W (Tc) Through Hole TO-220
Request a Quote Datasheet

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Single FETs, MOSFETs - 497-7521-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7521-5-ND
Single FETs, MOSFETs 497-7521-5-ND
N-Channel 300V 30A (Tc) 160W (Tc) Through Hole TO-220

N-Channel 300V 30A (Tc) 160W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP30NM30N - 1261714-STP30NM30N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP30NM30N
1261714-STP30NM30N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP30NM30N 1261714-STP30NM30N
Manufacturer: STMicroelectronics Win Source Part Number: 1261714-STP30NM30N Series: MDmesh II Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Part Status: Obsolete(EOL) Family Name: STP30NM30N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220AB Channel Type Type: N Drain Source Voltage: 300V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2500pF @ 50V Vgs (Maximum): ±20V Power Dissipation (Maximum): 160W (Tc) Rds On (Maximum) @ Id, Vgs: 90 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): FDP46N30; IXFV52N30P; IRFB4137PbF; Introduction Date: April 16, 2007 ECCN: EAR99 Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore Estimated EOL Date: 2019 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 1261714-STP30NM30N
Series: MDmesh II
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Part Status: Obsolete(EOL)
Family Name: STP30NM30N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 300V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2500pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 160W (Tc)
Rds On (Maximum) @ Id, Vgs: 90 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): FDP46N30; IXFV52N30P; IRFB4137PbF;
Introduction Date: April 16, 2007
ECCN: EAR99
Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date: 2019
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP30NM30N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP30NM30N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP30NM30N
MOSFET N-CH 300V 30A TO220AB

MOSFET N-CH 300V 30A TO220AB

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number 497-7521-5-ND 1261714-STP30NM30N STP30NM30N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP30NM30N Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
QG 75 nC
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