STMicroelectronics, Inc. Single FETs, MOSFETs STP27N3LH5

Description
N-Channel 30V 27A (Tc) 45W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 30V 27A (Tc) 45W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - 497-9095-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-9095-5-ND
Single FETs, MOSFETs 497-9095-5-ND
N-Channel 30V 27A (Tc) 45W (Tc) Through Hole TO-220

N-Channel 30V 27A (Tc) 45W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP27N3LH5 - 053926-STP27N3LH5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP27N3LH5
053926-STP27N3LH5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP27N3LH5 053926-STP27N3LH5
Manufacturer: STMicroelectronics Win Source Part Number: 053926-STP27N3LH5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 4.6nC @ 5V Max Input Capacitance: 475pF @ 25V Maximum Gate-Source Voltage: ±22V Maximum Rds On at Id,Vgs: 20 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 053926-STP27N3LH5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 4.6nC @ 5V
Max Input Capacitance: 475pF @ 25V
Maximum Gate-Source Voltage: ±22V
Maximum Rds On at Id,Vgs: 20 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP27N3LH5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP27N3LH5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP27N3LH5
MOSFET N-CH 30V 27A TO220AB

MOSFET N-CH 30V 27A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-9095-5-ND 053926-STP27N3LH5 STP27N3LH5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP27N3LH5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 30 volts
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