STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP24NM60N STP24NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212355-STP24NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: STP24NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1400pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): TK16E60W(S1VX); MMP60R190PTH; TK20E60U; RJK60S5DPN-00#T2; Introduction Date: January 05, 2011 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 212355-STP24NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: STP24NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1400pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): TK16E60W(S1VX); MMP60R190PTH; TK20E60U; RJK60S5DPN-00#T2; Introduction Date: January 05, 2011 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP24NM60N - 212355-STP24NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP24NM60N
212355-STP24NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP24NM60N 212355-STP24NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 212355-STP24NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: STP24NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1400pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): TK16E60W(S1VX); MMP60R190PTH; TK20E60U; RJK60S5DPN-00#T2; Introduction Date: January 05, 2011 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212355-STP24NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: STP24NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1400pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): TK16E60W(S1VX); MMP60R190PTH; TK20E60U; RJK60S5DPN-00#T2;
Introduction Date: January 05, 2011
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2030
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STP24NM60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP24NM60N
Single FETs, MOSFETs STP24NM60N
MOSFET N-CH 600V 17A TO220

MOSFET N-CH 600V 17A TO220

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-11229-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11229-5-ND
Single FETs, MOSFETs 497-11229-5-ND
N-Channel 600V 17A (Tc) 125W (Tc) Through Hole TO-220

N-Channel 600V 17A (Tc) 125W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP24NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP24NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP24NM60N
MOSFET N-CH 600V 17A TO220

MOSFET N-CH 600V 17A TO220

Supplier's Site
Mosfet, N Ch, 600V, 17A, To-220; Channel Type Stmicroelectronics - 47T9436 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 17A, To-220; Channel Type Stmicroelectronics
47T9436
Mosfet, N Ch, 600V, 17A, To-220; Channel Type Stmicroelectronics 47T9436
MOSFET, N CH, 600V, 17A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 600V, 17A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

Supplier's Site
Power Mosfet, N Channel, 17 A, 600 V, 0.168 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics - 94T3469 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 17 A, 600 V, 0.168 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics
94T3469
Power Mosfet, N Channel, 17 A, 600 V, 0.168 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics 94T3469
Power MOSFET, N Channel, 17 A, 600 V, 0.168 ohm, 10 V, 3 V RoHS Compliant: Yes

Power MOSFET, N Channel, 17 A, 600 V, 0.168 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II

MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212355-STP24NM60N STP24NM60N 497-11229-5-ND STP24NM60N 47T9436 94T3469 STP24NM60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP24NM60N Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 600V, 17A, To-220; Channel Type Stmicroelectronics Power Mosfet, N Channel, 17 A, 600 V, 0.168 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 125000 milliwatts 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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