The STMicroelectronics N-channel MOSFET, part number STP24N60M2, is rated for a maximum drain-source voltage of 600V and a continuous drain current of 18A. It features a low on-resistance of 0.19 Oc, which contributes to its efficiency in high-performance applications. The device is designed using MDmesh II Plus,Ñ¢ technology, which provides extremely low gate charge and improved thermal performance. It is suitable for various switching applications and is 100% avalanche tested, ensuring reliability under demanding conditions. The MOSFET is available in a TO-220 package, making it suitable for through-hole mounting. The maximum operating junction temperature is rated at 150¬8C, with a total power dissipation of 150W at a case temperature of 25¬8C. This product is RoHS compliant, aligning with environmental standards.
600V 18A N-CH MOSFET TO-220 168mR Rds(on) Product overview: STP24N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 18A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 18A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP24N60M2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 18A TO220
N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1003410-STP24N60M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1060pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 18A TO220
MOSFET, N-CH, 600V, 18A, TO-220AB; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:600V; CONTINUOUS DRAIN CURRENT ID:18A; ON RESISTANCE RDS(ON):0.168OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Ch 600V 0.168 Ohm 18A Mdmesh M2
MOSFET, N-CH, 600V, 18A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STP24N60M2 | STP24N60M2 | 497-13556-5-ND | 1003410-STP24N60M2 | STP24N60M2 | 110290782 | STP24N60M2 | 45AC7710 |
| Product Name | 600V 18A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP24N60M2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET | Mosfet, N-Ch, 600V, 18A, To-220Ab; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
