The STMicroelectronics N-channel MOSFET, part number STP24N60M2, is rated for a maximum drain-source voltage of 600V and a continuous drain current of 18A. It features a low on-resistance of 0.19 Oc, which contributes to its efficiency in high-performance applications. The device is designed using MDmesh II Plus,Ñ¢ technology, which provides extremely low gate charge and improved thermal performance. It is suitable for various switching applications and is 100% avalanche tested, ensuring reliability under demanding conditions. The MOSFET is available in a TO-220 package, making it suitable for through-hole mounting. The maximum operating junction temperature is rated at 150¬8C, with a total power dissipation of 150W at a case temperature of 25¬8C. This product is RoHS compliant, aligning with environmental standards.
MOSFET N-CH 600V 18A TO220
N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1003410-STP24N60M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1060pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 600V, 18A, TO-220AB; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:600V; CONTINUOUS DRAIN CURRENT ID:18A; ON RESISTANCE RDS(ON):0.168OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Ch 600V 0.168 Ohm 18A Mdmesh M2
MOSFET N-CH 600V 18A TO220
MOSFET, N-CH, 600V, 18A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP24N60M2 | 497-13556-5-ND | 1003410-STP24N60M2 | 110290782 | STP24N60M2 | STP24N60M2 | 45AC7710 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP24N60M2 | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 18A, To-220Ab; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| IDSS | 18000 milliamps | 18000 milliamps |
