600V 20A N-Ch MOSFET TO-220 290mR Product overview: STP20NM60 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP20NM60 can be used for catalog matching and distributor lookup.
N-Channel 600V 20A (Tc) 192W (Tc) Through Hole TO-220
MOSFET N-CH 600V 20A TO220AB
Manufacturer: STMicroelectronics
Win Source Part Number: 026244-STP20NM60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 192W (Tc)
Family Name: STP20NM60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 290 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): IXTV26N60P; AOT20C60L; AOT11C60L;
Introduction Date: February 18, 2002
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial
Power MOSFET, N Channel, 20 A, 600 V, 290 mohm, 30 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 600V 20A TO-220
MOSFET N-CH 600V 20A TO220AB
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STP20NM60 | 497-3184-5-ND | STP20NM60 | 026244-STP20NM60 | 01X0055 | 761-STP20NM60 | STP20NM60 | STP20NM60 |
| Product Name | 600V 20A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP20NM60 | Power Mosfet, N Channel, 20 A, 600 V, 290 Mohm, 30 V, 4 V Rohs Compliant Stmicroelectronics | MOSFET N-CH 600V 20A TO-220 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 192000 milliwatts | 192000 milliwatts | 192000 milliwatts | 192000 milliwatts | ||||
| TJ | -65 C (-85 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-3 | TO-220; TO-220-3 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
