STMicroelectronics, Inc. Single FETs, MOSFETs STP200N4F3

Description
N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-8789-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8789-5-ND
Single FETs, MOSFETs 497-8789-5-ND
N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-220

N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP200N4F3 - 1103662-STP200N4F3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP200N4F3
1103662-STP200N4F3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP200N4F3 1103662-STP200N4F3
Manufacturer: STMicroelectronics Win Source Part Number: 1103662-STP200N4F3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 5100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103662-STP200N4F3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 5100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP200N4F3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP200N4F3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP200N4F3
MOSFET N-CH 40V 120A TO220-3

MOSFET N-CH 40V 120A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-8789-5-ND 1103662-STP200N4F3 STP200N4F3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP200N4F3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 40 volts
Unlock Full Specs
to access all available technical data