STMicroelectronics, Inc. Single FETs, MOSFETs STP1N105K3

N-Channel 1050V 1.4A (Tc) 60W (Tc) Through Hole TO-220

N-Ch MOSFET 1050V 1.4A 11 Ohm TO-220 Product overview: STP1N105K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1050V, 1.4A, 11 Ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1050V, 1.4A, 11 Ohm, TO-220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP1N105K3 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1261692-STP1N105K3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 60W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1050V
Id - Continuous Drain Current: 1.4A
Rds On (Maximum) at Id, Vgs: 11Ohm at 600mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 100V