STMicroelectronics, Inc. FETs - Single - STP1N105K3 STP1N105K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261692-STP1N105K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 60W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1050V Id - Continuous Drain Current: 1.4A Rds On (Maximum) at Id, Vgs: 11Ohm at 600mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 100V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261692-STP1N105K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 60W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1050V Id - Continuous Drain Current: 1.4A Rds On (Maximum) at Id, Vgs: 11Ohm at 600mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 100V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STP1N105K3 - 1261692-STP1N105K3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STP1N105K3
1261692-STP1N105K3
FETs - Single - STP1N105K3 1261692-STP1N105K3
Manufacturer: STMicroelectronics Win Source Part Number: 1261692-STP1N105K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 60W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1050V Id - Continuous Drain Current: 1.4A Rds On (Maximum) at Id, Vgs: 11Ohm at 600mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261692-STP1N105K3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 60W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1050V
Id - Continuous Drain Current: 1.4A
Rds On (Maximum) at Id, Vgs: 11Ohm at 600mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 180pF at 100V

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N-Channel 1050V 1.4A (Tc) 60W (Tc) Through Hole TO-220

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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP1N105K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number 1261692-STP1N105K3 497-13394-5-ND STP1N105K3
Product Name FETs - Single - STP1N105K3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 1050 volts
QG 13 nC
PD 60000 milliwatts
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