MOSFET N-CH 650V 15A TO220
N-Channel 650V 15A (Tc) 110W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1261690-STP18N65M5
Series: MDmesh V
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Family Name: STF18N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1240pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 110W (Tc)
Rds On (Maximum) @ Id, Vgs: 220 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): TK20D60U(STA4,Q); TK20D60T(Q); TK20D60T;
Introduction Date: March 01, 2012
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 650V, 15A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 650V 15A TO220
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP18N65M5 | 497-STP18N65M5-ND | 1261690-STP18N65M5 | 45AC7704 | STP18N65M5 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP18N65M5 | Mosfet, N-Ch, 650V, 15A, To-220Ab; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 650 volts | ||||
| IDSS | 15000 milliamps | 15000 milliamps | |||
| PD | 110000 milliwatts | 110000 milliwatts |