STMicroelectronics, Inc. Single FETs, MOSFETs STP18N60M2

Description
MOSFET N-CH 600V 13A TO220
Request a Quote Datasheet
Description
MOSFET N-CH 600V 13A TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP18N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP18N60M2
Single FETs, MOSFETs STP18N60M2
MOSFET N-CH 600V 13A TO220

MOSFET N-CH 600V 13A TO220

Supplier's Site Datasheet
FETs - Single - STP18N60M2 - 814144-STP18N60M2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STP18N60M2
814144-STP18N60M2
FETs - Single - STP18N60M2 814144-STP18N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 814144-STP18N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600V Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 110W (Tc) Popularity: Low Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 280mOhm at 6.5A, 10V Gate Charge (Qg) (Maximum) at Vgs: 21.5nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 791pF at 100V Current - Continuous Drain (Id) at 25°C: 13A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STP18N Maximum Vgs: ±25V

Manufacturer: STMicroelectronics
Win Source Part Number: 814144-STP18N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 110W (Tc)
Popularity: Low
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 280mOhm at 6.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 21.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 791pF at 100V
Current - Continuous Drain (Id) at 25°C: 13A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STP18N
Maximum Vgs: ±25V

Buy Now
Single FETs, MOSFETs - 497-13971-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13971-5-ND
Single FETs, MOSFETs 497-13971-5-ND
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-220

N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-220

Buy Now Datasheet
MOSFETs - 7917813 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7917813
MOSFETs 7917813
Power MOSFET Nch MDmesh II plus 600V 13A

Power MOSFET Nch MDmesh II plus 600V 13A

Supplier's Site
MOSFETs - 7917813P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7917813P
MOSFETs 7917813P
Power MOSFET Nch MDmesh II plus 600V 13A

Power MOSFET Nch MDmesh II plus 600V 13A

Supplier's Site
MOSFETs - 1687021 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1687021
MOSFETs 1687021
Power MOSFET Nch MDmesh II plus 600V 13A

Power MOSFET Nch MDmesh II plus 600V 13A

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP18N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP18N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP18N60M2
N-channel 600 V, 0.255 Ohm typ.

N-channel 600 V, 0.255 Ohm typ.

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2

MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2

Buy Now Datasheet
Mosfet, N-Ch, 600V, 13A, To-220Ab; Channel Type Stmicroelectronics - 45AC7703 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 13A, To-220Ab; Channel Type Stmicroelectronics
45AC7703
Mosfet, N-Ch, 600V, 13A, To-220Ab; Channel Type Stmicroelectronics 45AC7703
MOSFET, N-CH, 600V, 13A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 13A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STP18N60M2 814144-STP18N60M2 497-13971-5-ND 7917813 7917813P STP18N60M2 STP18N60M2 45AC7703
Product Name Single FETs, MOSFETs FETs - Single - STP18N60M2 Single FETs, MOSFETs MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 13A, To-220Ab; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 13000 milliamps 13000 milliamps
PD 110000 milliwatts 110000 milliwatts
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