600V 13A N-CH MOSFET TO-220 255mR Rds(on) Product overview: STP18N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP18N60M2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 13A TO220
Power MOSFET Nch MDmesh II plus 600V 13A
Power MOSFET Nch MDmesh II plus 600V 13A
Power MOSFET Nch MDmesh II plus 600V 13A
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 814144-STP18N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 110W (Tc)
Popularity: Low
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 280mOhm at 6.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 21.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 791pF at 100V
Current - Continuous Drain (Id) at 25°C: 13A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STP18N
Maximum Vgs: ±25V
MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2
MOSFET, N-CH, 600V, 13A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
N-channel 600 V, 0.255 Ohm typ.
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STP18N60M2 | STP18N60M2 | 7917813 | 7917813P | 497-13971-5-ND | 814144-STP18N60M2 | STP18N60M2 | 45AC7703 | STP18N60M2 |
| Product Name | 600V 13A TO-220 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | FETs - Single - STP18N60M2 | MOSFET | Mosfet, N-Ch, 600V, 13A, To-220Ab; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| PD | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 600 volts |
