MOSFET N-CH 60V 16A TO220AB
Manufacturer: STMicroelectronics
Win Source Part Number: 031463-STP16NF06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STP16NF06
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 10nC @ 5V
Max Input Capacitance: 345pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 90 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): HUFA75307P3T; BUK7575-55A; HUF75309P3-Q; HUFA75309P3-NL;
Introduction Date: April 05, 2002
ECCN: EAR99
Country of Origin: China, Italy, Morocco, Philippines, Singapore
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial
N-Channel 60V 16A (Tc) 45W (Tc) Through Hole TO-220
MOSFET N-CH 60V 16A TO220AB
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP16NF06 | 031463-STP16NF06 | 497-2766-5-ND | 4862206 | STP16NF06 | STP16NF06 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP16NF06 | Single FETs, MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 16000 milliamps | |||||
| PD | 45000 milliwatts | 45000 milliwatts |
