STMicroelectronics, Inc. Single FETs, MOSFETs STP160N75F3

N-Channel 75V 120A (Tc) 330W (Tc) Through Hole TO-220

MOSFET N-CH 75V 120A TO220AB

MOSFET 75V 3.5mOhm 120A N-Channel

STripFETâ„¢ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Channel Type = N
Maximum Continuous Drain Current = 120 A
Maximum Drain Source Voltage = 75 V
Maximum Drain Source Resistance = 4 Ohms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-220
Mounting Type = Through Hole
Transistor Configuration = Single

STripFETâ„¢ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Channel Type = N
Maximum Continuous Drain Current = 120 A
Maximum Drain Source Voltage = 75 V
Maximum Drain Source Resistance = 4 Ohms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-220
Mounting Type = Through Hole
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Manufacturer: STMicroelectronics
Win Source Part Number: 038340-STP160N75F3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 85nC @ 10V
Max Input Capacitance: 6750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): AOB286L; BUK954R4-80E; BUK954R4-80E,127; STP160N75F3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

MOSFET N-CH 75V 120A TO220AB