MOSFET N-CH 30V 120A TO220
Power Field-Effect Transistor
Manufacturer: STMicroelectronics
Win Source Part Number: 1103637-STP160N3LL
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 42nC @ 4.5V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): IRLB4132PBF; STP105N3LL; STP160N3LL; STP80NF03L-04;
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
N-Channel 30V 120A (Tc) 136W (Tc) Through Hole TO-220
MOSFET, N-CH, 30V, 120A, 175DEG C, 136W ROHS COMPLIANT: YES
MOSFET N-CH 30V 120A TO220
MOSFET N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
| ODG (Origin Data Global) | Rochester Electronics | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP160N3LL | STP160N3LL | 1103637-STP160N3LL | 497-16021-5-ND | 69AH2846 | STP160N3LL | STP160N3LL |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP160N3LL | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 120A, 175Deg C, 136W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 120000 milliamps |