STMicroelectronics, Inc. Single FETs, MOSFETs STP14NF12FP

Description
N-Channel 120V 8.5A (Tc) 25W (Tc) Through Hole TO-220FP
Request a Quote Datasheet
Description
N-Channel 120V 8.5A (Tc) 25W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12606-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12606-5-ND
Single FETs, MOSFETs 497-12606-5-ND
N-Channel 120V 8.5A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 120V 8.5A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP14NF12FP - 038617-STP14NF12FP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP14NF12FP
038617-STP14NF12FP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP14NF12FP 038617-STP14NF12FP
Manufacturer: STMicroelectronics Win Source Part Number: 038617-STP14NF12FP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 120V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 7A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 038617-STP14NF12FP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 120V
Continuous Drain Current at 25°C: 8.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 460pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 7A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP14NF12FP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP14NF12FP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP14NF12FP
MOSFET N-CH 120V 8.5A TO220FP

MOSFET N-CH 120V 8.5A TO220FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-12606-5-ND 038617-STP14NF12FP STP14NF12FP
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP14NF12FP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack
V(BR)DSS 120 volts
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