STMicroelectronics, Inc. MOSFETs STP13NM60N

MOSFET N-Channel 650V 11A TO220

MOSFET N-Channel 650V 11A TO220

N-Channel 600V 11A (Tc) 90W (Tc) Through Hole TO-220

MOSFET N-CH 600V 11A TO220-3

600V N-CH MOSFET, 11A, 360mR, TO-220 Product overview: STP13NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP13NM60N can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 031458-STP13NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Family Name: STP13NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 790pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 360 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IPP60R385CP; SiHP15N60E-E3; SPP16N50C3XK;
Introduction Date: February 23, 2009
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited