STMicroelectronics, Inc. MOSFETs STP13NM60N

Description
MOSFET N-Channel 650V 11A TO220
Request a Quote Datasheet
Description
MOSFET N-Channel 650V 11A TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 7610008 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7610008
MOSFETs 7610008
MOSFET N-Channel 650V 11A TO220

MOSFET N-Channel 650V 11A TO220

Supplier's Site
MOSFETs - 1687488 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1687488
MOSFETs 1687488
MOSFET N-Channel 650V 11A TO220

MOSFET N-Channel 650V 11A TO220

Supplier's Site
Single FETs, MOSFETs - 497-STP13NM60N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STP13NM60N-ND
Single FETs, MOSFETs 497-STP13NM60N-ND
N-Channel 600V 11A (Tc) 90W (Tc) Through Hole TO-220

N-Channel 600V 11A (Tc) 90W (Tc) Through Hole TO-220

Buy Now Datasheet
Single FETs, MOSFETs - STP13NM60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP13NM60N
Single FETs, MOSFETs STP13NM60N
MOSFET N-CH 600V 11A TO220-3

MOSFET N-CH 600V 11A TO220-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP13NM60N - 031458-STP13NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP13NM60N
031458-STP13NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP13NM60N 031458-STP13NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 031458-STP13NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Family Name: STP13NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 790pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 360 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): IPP60R385CP; SiHP15N60E-E3; SPP16N50C3XK; Introduction Date: February 23, 2009 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 031458-STP13NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Family Name: STP13NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 790pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 360 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IPP60R385CP; SiHP15N60E-E3; SPP16N50C3XK;
Introduction Date: February 23, 2009
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP13NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP13NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP13NM60N
MOSFET N-CH 600V 11A TO220-3

MOSFET N-CH 600V 11A TO220-3

Supplier's Site
N Channel Power Mosfet, Mdmesh, 600V, 11A, To-220; Channel Type Stmicroelectronics - 09R6075 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Power Mosfet, Mdmesh, 600V, 11A, To-220; Channel Type Stmicroelectronics
09R6075
N Channel Power Mosfet, Mdmesh, 600V, 11A, To-220; Channel Type Stmicroelectronics 09R6075
N CHANNEL POWER MOSFET, MDmesh, 600V, 11A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:90W; MSL:- RoHS Compliant: Yes

N CHANNEL POWER MOSFET, MDmesh, 600V, 11A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:90W; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600 Volt 11 Amp Power MDmesh

MOSFET N-Ch 600 Volt 11 Amp Power MDmesh

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Technical Specifications

  RS Components, Ltd. DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 7610008 497-STP13NM60N-ND STP13NM60N 031458-STP13NM60N STP13NM60N 09R6075 STP13NM60N
Product Name MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP13NM60N Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Power Mosfet, Mdmesh, 600V, 11A, To-220; Channel Type Stmicroelectronics MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
Package Type TO-220; To-220 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
Number of units in IC 1
Transistor Technology / Material MOSFET (Metal Oxide)
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