MOSFET N-CH 600V 10A TO220AB
N-Channel 600V 10A (Tc) 90W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 005204-STP11NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 850pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 10A TO220AB
MOSFET N-channel 600V, 10A FDMesh II
Power MOSFET, N Channel, 10 A, 600 V, 0.37 ohm, 10 V, 4 V RoHS Compliant: Yes
N CHANNEL POWER MOSFET, FDmesh, 600V, 10A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:90W; MSL:- RoHS Compliant: Yes
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Power MOSFET |
| Product Number | STP11NM60ND | 7609982P | 1687485 | 497-8442-5-ND | 005204-STP11NM60ND | STP11NM60ND | STP11NM60ND | 94T3451 | 57P1857 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60ND | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Power Mosfet, N Channel, 10 A, 600 V, 0.37 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics | N Channel Power Mosfet, Fdmesh, 600V, 10A, To-220; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 600 volts | 600 volts | |||||||
| IDSS | 10000 milliamps | 10000 milliamps | |||||||
| PD | 90000 milliwatts | 90000 milliwatts | 90000 milliwatts |
