MOSFET N-CH 600V 10A TO220AB
Manufacturer: STMicroelectronics
Win Source Part Number: 005204-STP11NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 850pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
600V 10A N-Channel MOSFET TO-220 Product overview: STP11NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 10A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP11NM60ND can be used for catalog matching and distributor lookup.
N-Channel 600V 10A (Tc) 90W (Tc) Through Hole TO-220
Power MOSFET, N Channel, 10 A, 600 V, 0.37 ohm, 10 V, 4 V RoHS Compliant: Yes
N CHANNEL POWER MOSFET, FDmesh, 600V, 10A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:90W; MSL:- RoHS Compliant: Yes
MOSFET N-channel 600V, 10A FDMesh II
MOSFET N-CH 600V 10A TO220AB
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP11NM60ND | 7609982P | 1687485 | 005204-STP11NM60ND | 278-STP11NM60ND | 497-8442-5-ND | 94T3451 | 57P1857 | STP11NM60ND | STP11NM60ND |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60ND | N-Channel 600V 10A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Power Mosfet, N Channel, 10 A, 600 V, 0.37 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics | N Channel Power Mosfet, Fdmesh, 600V, 10A, To-220; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 600 volts | 600 volts | ||||||||
| IDSS | 10000 milliamps | 10000 milliamps | ||||||||
| PD | 90000 milliwatts | 90000 milliwatts | 90000 milliwatts | 90000 milliwatts |
