MOSFET N-CH 650V 11A TO220AB
N CHANNEL MOSFET, 650V, 11A, TO-220; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:650V; CONTINUOUS DRAIN CURRENT ID:11A; ON RESISTANCE RDS(ON):0.45OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
N-Channel 650V 11A (Tc) 160W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1261661-STP11NM60
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: STP11NM60
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 160W
Alternative Parts (Cross-Reference): AOT15S60; FCP11N60_NL; FDP14N60;
Introduction Date: May 17, 2000
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 450mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1000pF at 25V
N CHANNEL MOSFET, 650V, 11A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, N-CH, 600V, 11A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 650V 11A TO220AB
| ODG (Origin Data Global) | Radwell International | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP11NM60 | 16463169 | 497-2773-5-ND | 1261661-STP11NM60 | 89K1608 | 45AC7687 | STP11NM60 | STP11NM60 |
| Product Name | Single FETs, MOSFETs | Transistor | Single FETs, MOSFETs | FETs - Single - STP11NM60 | N Channel Mosfet, 650V, 11A, To-220; Channel Type Stmicroelectronics | Mosfet, N-Ch, 600V, 11A, To-220Ab; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 650 volts | 650 volts | ||||||
| IDSS | 11000 milliamps | 11000 milliamps | 11000 milliamps | |||||
| PD | 160000 milliwatts | 160000 milliwatts |
