STMicroelectronics, Inc. FETs - Single - STP11N65M5 STP11N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261660-STP11N65M5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 85W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 480mOhm at 4.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 644pF at 100V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261660-STP11N65M5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 85W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 480mOhm at 4.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 644pF at 100V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STP11N65M5 - 1261660-STP11N65M5 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STP11N65M5
1261660-STP11N65M5
FETs - Single - STP11N65M5 1261660-STP11N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1261660-STP11N65M5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 85W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 480mOhm at 4.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 644pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261660-STP11N65M5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 85W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 480mOhm at 4.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 644pF at 100V

Buy Now
Singapore
N-Channel 650V 9A TO-220 MOSFET Transistor
278-STP11N65M5
N-Channel 650V 9A TO-220 MOSFET Transistor 278-STP11N65M5
650V 9A N-Channel MOSFET TO-220 480mR RdsOn Product overview: STP11N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP11N65M5 can be used for catalog matching and distributor lookup.

650V 9A N-Channel MOSFET TO-220 480mR RdsOn Product overview: STP11N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP11N65M5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - STP11N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP11N65M5
Single FETs, MOSFETs STP11N65M5
MOSFET N-CH 650V 9A TO220

MOSFET N-CH 650V 9A TO220

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13170-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13170-ND
Single FETs, MOSFETs 497-13170-ND
N-Channel 650V 9A (Tc) 85W (Tc) Through Hole TO-220

N-Channel 650V 9A (Tc) 85W (Tc) Through Hole TO-220

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V

MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP11N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP11N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP11N65M5
MOSFET N-CH 650V 9A TO220

MOSFET N-CH 650V 9A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1261660-STP11N65M5 278-STP11N65M5 STP11N65M5 497-13170-ND STP11N65M5 STP11N65M5
Product Name FETs - Single - STP11N65M5 N-Channel 650V 9A TO-220 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts 650 volts
QG 17 nC
PD 85000 milliwatts 85000 milliwatts 85000 milliwatts
TJ 150 C (302 F) -55 C (-67 F) 150 C (302 F)
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