STMicroelectronics, Inc. Single FETs, MOSFETs STP11N65M2

N-Channel 650V 7A (Tc) 85W (Tc) Through Hole TO-220

N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package Product overview: STP11N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.60 Ohm, 7 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.60 Ohm, 7 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP11N65M2 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 720604-STP11N65M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 85W
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 7A
Rds On (Maximum) at Id, Vgs: 670mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 12.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 410pF at 100V