STMicroelectronics, Inc. Single FETs, MOSFETs STP11N52K3

Description
N-Channel 525V 10A (Tc) 125W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 525V 10A (Tc) 125W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-11870-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11870-5-ND
Single FETs, MOSFETs 497-11870-5-ND
N-Channel 525V 10A (Tc) 125W (Tc) Through Hole TO-220

N-Channel 525V 10A (Tc) 125W (Tc) Through Hole TO-220

Buy Now Datasheet
FETs - Single - STP11N52K3 - 1261659-STP11N52K3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STP11N52K3
1261659-STP11N52K3
FETs - Single - STP11N52K3 1261659-STP11N52K3
Manufacturer: STMicroelectronics Win Source Part Number: 1261659-STP11N52K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 125W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 525V Id - Continuous Drain Current: 10A Rds On (Maximum) at Id, Vgs: 510mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA Gate Charge (Qg) (Maximum) at Vgs: 51nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 50V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261659-STP11N52K3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 125W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 525V
Id - Continuous Drain Current: 10A
Rds On (Maximum) at Id, Vgs: 510mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs: 51nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 50V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP11N52K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP11N52K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP11N52K3
MOSFET N-CH 525V 10A TO220

MOSFET N-CH 525V 10A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number 497-11870-5-ND 1261659-STP11N52K3 STP11N52K3
Product Name Single FETs, MOSFETs FETs - Single - STP11N52K3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 Through Hole
V(BR)DSS 525 volts
QG 51 nC
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