STMicroelectronics, Inc. Single FETs, MOSFETs STP110N8F7

N-Channel 80V 80A (Tc) 170W (Tc) Through Hole TO-220

N-channel 80 V, 6.4 mOhm typ., 80 A STripFET F7 Power MOSFET in a TO-220 package Product overview: STP110N8F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, 6.4 mOhm, 80 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, 6.4 mOhm, 80 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP110N8F7 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor

Manufacturer: STMicroelectronics
Win Source Part Number: 1261658-STP110N8F7
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 170W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 80V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 7.5mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 46.8nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3435pF at 40V