Manufacturer: STMicroelectronics
Win Source Part Number: 811597-STP110N7F6
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 68V
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 176W (Tc)
Popularity: Low
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6.5mOhm at 55A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 100nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 5850pF at 25V
Current - Continuous Drain (Id) at 25°C: 110A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STP110
Maximum Vgs: ±20V
MOSFET N-CHANNEL 68V 110A TO220
MOSFET N-CHANNEL 68V 110A TO220
MOSFET N-channel 68 V, 0.0055 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
MOSFET, N-CH, 68V, 110A, 175DEG C, 176W ROHS COMPLIANT: YES
| Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 811597-STP110N7F6 | STP110N7F6 | STP110N7F6 | STP110N7F6 | 69AH2843 |
| Product Name | FETs - Single - STP110N7F6 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 68V, 110A, 175Deg C, 176W Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| PD | 176000 milliwatts | 176000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 |
