STMicroelectronics, Inc. FETs - Single - STP110N7F6 STP110N7F6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 811597-STP110N7F6 Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 68V Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 176W (Tc) Popularity: Low Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 6.5mOhm at 55A, 10V Gate Charge (Qg) (Maximum) at Vgs: 100nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 5850pF at 25V Current - Continuous Drain (Id) at 25°C: 110A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STP110 Maximum Vgs: ±20V
  • FETs - Single - STP110N7F6 - 811597-STP110N7F6 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STP110N7F6 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP110N7F6 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 68V, 110A, 175Deg C, 176W Rohs Compliant Stmicroelectronics - 69AH2843 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 811597-STP110N7F6 Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 68V Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 176W (Tc) Popularity: Low Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 6.5mOhm at 55A, 10V Gate Charge (Qg) (Maximum) at Vgs: 100nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 5850pF at 25V Current - Continuous Drain (Id) at 25°C: 110A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STP110 Maximum Vgs: ±20V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STP110N7F6 - 811597-STP110N7F6 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STP110N7F6
811597-STP110N7F6
FETs - Single - STP110N7F6 811597-STP110N7F6
Manufacturer: STMicroelectronics Win Source Part Number: 811597-STP110N7F6 Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 68V Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 176W (Tc) Popularity: Low Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 6.5mOhm at 55A, 10V Gate Charge (Qg) (Maximum) at Vgs: 100nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 5850pF at 25V Current - Continuous Drain (Id) at 25°C: 110A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STP110 Maximum Vgs: ±20V

Manufacturer: STMicroelectronics
Win Source Part Number: 811597-STP110N7F6
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 68V
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 176W (Tc)
Popularity: Low
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6.5mOhm at 55A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 100nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 5850pF at 25V
Current - Continuous Drain (Id) at 25°C: 110A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STP110
Maximum Vgs: ±20V

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 68 V 0.0055 Ohm 110 A MOSFET Transistor
278-STP110N7F6
N-Channel 68 V 0.0055 Ohm 110 A MOSFET Transistor 278-STP110N7F6
N-channel 68 V, 0.0055 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Product overview: STP110N7F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 68 V, 0.0055 Ohm, 110 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 68 V, 0.0055 Ohm, 110 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP110N7F6 can be used for catalog matching and distributor lookup.

N-channel 68 V, 0.0055 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Product overview: STP110N7F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 68 V, 0.0055 Ohm, 110 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 68 V, 0.0055 Ohm, 110 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP110N7F6 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - STP110N7F6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP110N7F6
Single FETs, MOSFETs STP110N7F6
MOSFET N-CHANNEL 68V 110A TO220

MOSFET N-CHANNEL 68V 110A TO220

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP110N7F6 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP110N7F6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP110N7F6
MOSFET N-CHANNEL 68V 110A TO220

MOSFET N-CHANNEL 68V 110A TO220

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STP110N7F6
MOSFET STP110N7F6
MOSFET N-channel 68 V, 0.0055 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package

MOSFET N-channel 68 V, 0.0055 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package

Buy Now Datasheet
Mosfet, N-Ch, 68V, 110A, 175Deg C, 176W Rohs Compliant Stmicroelectronics - 69AH2843 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 68V, 110A, 175Deg C, 176W Rohs Compliant Stmicroelectronics
69AH2843
Mosfet, N-Ch, 68V, 110A, 175Deg C, 176W Rohs Compliant Stmicroelectronics 69AH2843
MOSFET, N-CH, 68V, 110A, 175DEG C, 176W ROHS COMPLIANT: YES

MOSFET, N-CH, 68V, 110A, 175DEG C, 176W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 811597-STP110N7F6 278-STP110N7F6 STP110N7F6 STP110N7F6 STP110N7F6 69AH2843
Product Name FETs - Single - STP110N7F6 N-Channel 68 V 0.0055 Ohm 110 A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 68V, 110A, 175Deg C, 176W Rohs Compliant Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel
PD 176000 milliwatts 176000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3
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