STMicroelectronics, Inc. Single FETs, MOSFETs STP10NM60ND

Description
N-Channel 600V 8A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 600V 8A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12276-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12276-ND
Single FETs, MOSFETs 497-12276-ND
N-Channel 600V 8A (Tc) 70W (Tc) Through Hole TO-220

N-Channel 600V 8A (Tc) 70W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10NM60ND - 1261657-STP10NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10NM60ND
1261657-STP10NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10NM60ND 1261657-STP10NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 1261657-STP10NM60ND Series: FDmesh II Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Family Name: STP10NM60ND Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 577pF @ 50V Vgs (Maximum): ±25V Power Dissipation (Maximum): 70W (Tc) Rds On (Maximum) @ Id, Vgs: 600 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): FCP11N60F; FCP11N60F_NL; FCP7N60_F080; Introduction Date: February 10, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1261657-STP10NM60ND
Series: FDmesh II
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Family Name: STP10NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 577pF @ 50V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 70W (Tc)
Rds On (Maximum) @ Id, Vgs: 600 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): FCP11N60F; FCP11N60F_NL; FCP7N60_F080;
Introduction Date: February 10, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR

MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR

Buy Now Datasheet
Mosfet, N Ch, 600V, 8A, To-220; Transistor Polarity Stmicroelectronics - 87T3895 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 8A, To-220; Transistor Polarity Stmicroelectronics
87T3895
Mosfet, N Ch, 600V, 8A, To-220; Transistor Polarity Stmicroelectronics 87T3895
MOSFET, N CH, 600V, 8A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.57ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 600V, 8A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.57ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP10NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP10NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP10NM60ND
MOSFET N-CH 600V 8A TO220

MOSFET N-CH 600V 8A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-12276-ND 1261657-STP10NM60ND STP10NM60ND 87T3895 STP10NM60ND
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10NM60ND MOSFET Mosfet, N Ch, 600V, 8A, To-220; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-3; TO-220 TO-220; TO-220-3
QG 20 nC
PD 70000 milliwatts
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