N-Channel 600V 8A (Tc) 70W (Tc) Through Hole TO-220
600V 8A N-CH MOSFET TO-220 600mR FDmesh II Product overview: STP10NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 8A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP10NM60ND can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1261657-STP10NM60ND
Series: FDmesh II
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Family Name: STP10NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 577pF @ 50V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 70W (Tc)
Rds On (Maximum) @ Id, Vgs: 600 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): FCP11N60F; FCP11N60F_NL; FCP7N60_F080;
Introduction Date: February 10, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 8A TO220
MOSFET, N CH, 600V, 8A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.57ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-12276-ND | 278-STP10NM60ND | 1261657-STP10NM60ND | STP10NM60ND | 87T3895 | STP10NM60ND |
| Product Name | Single FETs, MOSFETs | 600V 8A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10NM60ND | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 600V, 8A, To-220; Transistor Polarity Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 | TO-3; TO-220 | ||
| PD | 70000 milliwatts | 70000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
