600V 10A N-CH MOSFET TO-220 550mR Product overview: STP10NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP10NM60N can be used for catalog matching and distributor lookup.
N-Channel 600V 10A (Tc) 70W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 031455-STP10NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STP10NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 577pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): SPP07N60S5X; IPP65R660CFDXKSA1; IPP65R660CFDAXK; IPP65R660CFDA;
Introduction Date: June 10, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MOSFET N-channel 600 V Mdmesh 8A
MOSFET N-CH 600V 10A TO220AB
N CHANNEL POWER MOSFET, MDmesh II, 600V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:70W; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET |
| Product Number | 278-STP10NM60N | 497-9098-5-ND | 7609972 | 7609972P | 031455-STP10NM60N | STP10NM60N | STP10NM60N | 25R9471 |
| Product Name | 600V 10A TO-220 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10NM60N | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Power Mosfet, Mdmesh Ii, 600V, 8A, To-220; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-220; TO-220-3 | TO-220; To-220 | TO-220; TO-220 | TO-220; SOT3; TO-220 | TO-220; TO-220-3 | TO-3; TO-220 | ||
| MOSFET Operating Mode | Enhancement |
