STMicroelectronics, Inc. Single FETs, MOSFETs STP10NM60N

Description
N-Channel 600V 10A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 600V 10A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-9098-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-9098-5-ND
Single FETs, MOSFETs 497-9098-5-ND
N-Channel 600V 10A (Tc) 70W (Tc) Through Hole TO-220

N-Channel 600V 10A (Tc) 70W (Tc) Through Hole TO-220

Buy Now Datasheet
Corby, Northants, United Kingdom
MOSFETs
7609972
MOSFETs 7609972
MOSFET N-Channel 600V 10A TO220

MOSFET N-Channel 600V 10A TO220

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
7609972P
MOSFETs 7609972P
MOSFET N-Channel 600V 10A TO220

MOSFET N-Channel 600V 10A TO220

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
1687484
MOSFETs 1687484
MOSFET N-Channel 600V 10A TO220

MOSFET N-Channel 600V 10A TO220

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10NM60N - 031455-STP10NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10NM60N
031455-STP10NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10NM60N 031455-STP10NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 031455-STP10NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Family Name: STP10NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 577pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 600 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): SPP07N60S5X; IPP65R660CFDXKSA1; IPP65R660CFDAXK; IPP65R660CFDA; Introduction Date: June 10, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 031455-STP10NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STP10NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 577pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): SPP07N60S5X; IPP65R660CFDXKSA1; IPP65R660CFDAXK; IPP65R660CFDA;
Introduction Date: June 10, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
N Channel Power Mosfet, Mdmesh Ii, 600V, 8A, To-220; Channel Type Stmicroelectronics - 25R9471 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Power Mosfet, Mdmesh Ii, 600V, 8A, To-220; Channel Type Stmicroelectronics
25R9471
N Channel Power Mosfet, Mdmesh Ii, 600V, 8A, To-220; Channel Type Stmicroelectronics 25R9471
N CHANNEL POWER MOSFET, MDmesh II, 600V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:70W; MSL:- RoHS Compliant: Yes

N CHANNEL POWER MOSFET, MDmesh II, 600V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:70W; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP10NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP10NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP10NM60N
MOSFET N-CH 600V 10A TO220AB

MOSFET N-CH 600V 10A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V Mdmesh 8A

MOSFET N-channel 600 V Mdmesh 8A

Buy Now Datasheet

Technical Specifications

  DigiKey RS Components, Ltd. RS Components, Ltd. Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-9098-5-ND 7609972 7609972P 031455-STP10NM60N 25R9471 STP10NM60N STP10NM60N
Product Name Single FETs, MOSFETs MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10NM60N N Channel Power Mosfet, Mdmesh Ii, 600V, 8A, To-220; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220 TO-220; TO-220 TO-220; SOT3; TO-220 TO-3; TO-220 TO-220; TO-220-3
V(BR)DSS 600 volts 600 volts 600 volts
IDSS 10000 milliamps 10000 milliamps 10000 milliamps
rDS(on) 0.5500 ohms 0.5500 ohms
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