MOSFET N-CH 80V 100A TO220
Manufacturer: STMicroelectronics
Win Source Part Number: 1103618-STP100N8F6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 176W (Tc)
Family Name: STP100N8F6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 5955pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): PSMN008-75P,127; IPP80N08S2L07XK; SPP80N08S2-07; IPP80N08S207XK;
Introduction Date: December 02, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2034
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
N-Channel 80V 100A (Tc) 176W (Tc) Through Hole TO-220
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
80V 100A 8mΩ@10V,50A 176W 4V@250uA N Channel TO-220 MOSFETs ROHS
MOSFET N-CH 80V 100A TO220
MOSFET N-channel 80 V, 0.008 Ohm typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | Rochester Electronics | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP100N8F6 | 1103618-STP100N8F6 | 497-15553-5-ND | 719658 | STP100N8F6 | STP100N8F6 | STP100N8F6 | STP100N8F6 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP100N8F6 | Single FETs, MOSFETs | MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | |||||
| IDSS | 100000 milliamps | |||||||
| PD | 176000 milliwatts | 176000 milliwatts | 176000 milliwatts |
