STMicroelectronics, Inc. Single FETs, MOSFETs STN3P10F6

The STN3P10F6 is a P-channel Power MOSFET designed for switching applications, featuring a drain-source voltage of -100 V, a continuous drain current of -3 A at 25 °C, and a typical on-resistance of 0.136 Ω at -10 V gate drive. It is packaged in an SOT-223 case with dimensions of 6.5 mm length, 3.5 mm width, and 1.8 mm height, and supports a maximum junction temperature of 175 °C. The device exhibits low gate charge of 16.5 nC and high avalanche ruggedness. Thermal resistance from junction to PCB is 46 °C/W when mounted on a 1 in² FR-4 board with 2 oz copper.